Magnetic Anisotropy of Co2MnSn1−xSbx Thin Films Grown on GaAs (001)

Authors

Moti R. Paudel, Southern Illinois University Carbondale
Christopher S. Wolfe, Southern Illinois University Carbondale
Heather M.A. Patton, Southern Illinois University Carbondale
Jeff Simonson, Southern Illinois University Carbondale
Igor Dubenko, Southern Illinois University Carbondale
Naushad Ali, Southern Illinois University Carbondale
Shane Stadler, Louisiana State University

Comments

© 2009 American Institute of Physics

Published in Journal of Applied Physics, Vol. 105 No. 7 (2009) at doi: 10.1063/1.3068530

Abstract

Heusler alloy Co₂MnSn_1−xSb_x (x = 0.0, 0.5, and 1.0) thin films were grown on GaAs (001) substrates using pulsed laser deposition techniques. Growth parameters have been determined that result in highly magnetically anisotropic, crystalline, and oriented (001) films. The angular dependences, relative to the GaAs (001) crystallographic directions, of the coercive field H_c(θ) and the remanence M_r(θ) were determined from angle dependent magneto-optic Kerr effect (MOKE) measurements. It was found that H_c(θ) revealed higher order symmetry contributions to the magnetic anisotropy than did M_r(θ). The Fourier analysis of rotational MOKE data was used to determine the symmetry contributions to the total anisotropy.

Recommended Citation

Paudel, Moti R., Wolfe, Christopher S., Patton, Heather M., Simonson, Jeff, Dubenko, Igor, Ali, Naushad and Stadler, Shane. "Magnetic Anisotropy of Co2MnSn1−xSbx Thin Films Grown on GaAs (001)." (Apr 2009).