Date of Award
Doctor of Philosophy
Low dimensional semiconductors are promising materials with diverse range of applications in a variety of fields. Specifically, in recent times low dimensional oxide and sulfide based semiconductors are regarded as materials that can have potential applications in chemical gas sensor, optoelectronic devices and memristor. How ever, in some cases it is envisioned that appropriate doping as well as phase stabilization is important in enhancing their material properties. This work presents the synthesis, characterization and application of various (pristine and doped) quasi-one dimensional metal oxides (TiO2, VO2) and two-dimensional materials (CuO thin film, MoS2). Some practical protocols for stabilization of specific phases at ambient conditions via a new method of doping in VO2 nanostructures with aluminum, is demonstrated. Similarly, a temperature-doping level phase diagram for the free-standing nanostructures in the temperature range close to the ambient conditions was presented. TiO2 nanowire was doped during growth and electrical measurements on individual TiO2 single crystal nanowires indicate that light in visible range can induce electron-hole pair formation. Furthermore, gas sensing (CO, H2) measurements taken under visible light irradiation imply that photo-activated chemical oxidization on the surface of TiO2 nanowires occurs, which is responsible for the observed measurements. Further, the effect of self heating in some nanostructures was also explored. Since self-heating is a prospective power-efficient energy delivery channel to the conductometric chemical sensors that require elevated temperatures for their operation, the unprecedentedly low power consumption can be achieved via minimizing the heat dissipation in the optimized device architecture. By investigating the heat dissipation in these devices we show that the thermal, electrical and chemical properties of the self-heated semiconducting nanowires appear to be strongly coupled with each other at nanoscale. This opens up unique opportunity to fabricate low power nanoscopic sensing leading to an ultra-small and power efficient single nanostructure gas recognition system. The CuO film based lateral devices were fabricated and studied for its resistive switching behavior. A good, stable and reproducible threshold RS performance of CuO film was obtained by electrical measurement. Finally, the micro-flake MoS2 based FET photoelectronic device was fabricated (using mechanically exfoliated MoS2) and its electronic and photoelectronic properties were investigated. We show that though the FET mobility values of MoS2 microflake is in the average range, but the photo-responsivity is much higher compared to most of others similar sulfide based 2D layered materials.
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