© 2009 American Institute of Physics

Published in Journal of Applied Physics, Vol. 105 No. 7 (2009) at doi: 10.1063/1.3068530


Heusler alloy Co2MnSn1−xSbx (x = 0.0, 0.5, and 1.0) thin films were grown on GaAs (001) substrates using pulsed laser deposition techniques. Growth parameters have been determined that result in highly magnetically anisotropic, crystalline, and oriented (001) films. The angular dependences, relative to the GaAs (001) crystallographic directions, of the coercive field Hc(θ) and the remanence Mr(θ) were determined from angle dependent magneto-optic Kerr effect (MOKE) measurements. It was found that Hc(θ) revealed higher order symmetry contributions to the magnetic anisotropy than did Mr(θ). The Fourier analysis of rotational MOKE data was used to determine the symmetry contributions to the total anisotropy.