Date of Award
5-1-2019
Degree Name
Doctor of Philosophy
Department
Electrical and Computer Engineering
First Advisor
Ahmed, Shaikh
Abstract
While silicon-based transistors approach their physical limit and naturally scaled-down 2D graphene layers have low ON/OFF current ratio due to zero bandgap, monolayer 2D molybdenum disulphide (MoS2) holds promise as channel material for future field-effect transistors (FETs) with a finite non-zero energy bandgap and a high ON/OFF current ratio. Besides having a direct energy bandgap, strong covalent bond, high thermal stability, absence of dangling bonds, and an atomic scale thickness of 0.65 nm make MoS2 an excellent candidate for channel material. Recently, a research team at the Lawrence Berkeley National Laboratory has been able to demonstrate a 2-D MoS2-CNT (Carbon Nanotube) based transistor with a gate length of 1 nm. Also, MoS2 transistors operating at gigahertz frequencies (with a cutoff frequency of ~6 GHz) have been reported. Nevertheless, given the realistic construction of an FET with multiple contacts and interfaces, electron mobility in monolayer MoS2 is degraded by various scattering mechanisms.
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