Date of Award

5-1-2019

Degree Name

Doctor of Philosophy

Department

Electrical and Computer Engineering

First Advisor

Ahmed, Shaikh

Abstract

While silicon-based transistors approach their physical limit and naturally scaled-down 2D graphene layers have low ON/OFF current ratio due to zero bandgap, monolayer 2D molybdenum disulphide (MoS2) holds promise as channel material for future field-effect transistors (FETs) with a finite non-zero energy bandgap and a high ON/OFF current ratio. Besides having a direct energy bandgap, strong covalent bond, high thermal stability, absence of dangling bonds, and an atomic scale thickness of 0.65 nm make MoS2 an excellent candidate for channel material. Recently, a research team at the Lawrence Berkeley National Laboratory has been able to demonstrate a 2-D MoS2-CNT (Carbon Nanotube) based transistor with a gate length of 1 nm. Also, MoS2 transistors operating at gigahertz frequencies (with a cutoff frequency of ~6 GHz) have been reported. Nevertheless, given the realistic construction of an FET with multiple contacts and interfaces, electron mobility in monolayer MoS2 is degraded by various scattering mechanisms.

Available for download on Thursday, January 23, 2020

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